SDR10D thru SDR10M
and
SDR10DSMS thru SDR10MSMS
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
10 AMPS
Designer’s Data Sheet
200 ─ 1000 VOLTS
Part Number/Ordering Information 1/
5 μs STANDARD RECOVERY
RECTIFIER
SDR10 __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
FEATURES:
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Standard Recovery: 5 μs maximum 4/
PIV to 1000 Volts
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S = S Level
Hermetically Sealed
Low Reverse Leakage Current
Single Chip Construction
High Surge Rating
Replaces Larger DO-4 Rectifiers
Low Thermal Resistance
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Voltage/Family
Available in Axial & Square Tab Versions
D = 200V
G = 400V
J = 600V
K = 800 V
M = 1000 V
TX, TXV, and S-Level Screening Available 2/
Faster Recovery Devices Available - Contact
Factory
MAXIMUM RATINGS 3/
RATING
SYMBOL VALUE
UNIT
SDR10D & SDR10DSMS
SDR10G & SDR10GSMS
SDR10J & SDR10JSMS
SDR10K & SDR10KSMS
SDR10M & SDR10MSMS
200
400
600
800
1000
Peak Repetitive Reverse
Voltage
VRRM
VRWM
VR
Volts
And
DC Blocking Voltage
10.0
Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25°C )
IO
Amps
Amps
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
150
IFSM
TJ and
TSTG
-65 to +175
Operating & Storage Temperature
°C
Junction to Lead for Axial, L =.125"
Thermal Resistance
RθJL
RθJE
8
4
°C/W
Junction to End Tab for Surface Mount
NOTES:
Axial Leaded
SMS
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
4/ IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00001C
DOC
